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IPB017N08N5 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB017N08N5 product

IPB017N08N5

MOSFETs - Single

MOSFETN-Channel80VOptiMOS 5

The IPB017N08N5 is a high-performance 80V, 177A N-channel power MOSFET in a D²PAK package, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Low-power applications where smaller packages are required

Check before use

  • Thermal dissipation requirements
  • Gate driver current capability

Key specifications

VDS
80 V
ID
177 A
RDS(on)
1.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
MSL1
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

b58f880facaa999f81bccfcaf2518ca4_2005292008_Infineon-Technologies-IPB017N08N5_C536478.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB017N08N5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 5 N-channel power transistor from Infineon, rated for 80V and 177A, designed for high-efficiency power conversion.