ProjectsPricingInsights

IPB027N10N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB027N10N3 G product

IPB027N10N3 G

MOSFETs - Single

MOSFETN-Channel100VInfineon

The IPB027N10N3 G is a high-performance 100V N-channel power MOSFET from Infineon, optimized for high-efficiency power switching.

Best for

  • Synchronous rectification
  • High-frequency power conversion

Avoid if

  • Low-power, space-constrained applications where smaller packages are required.

Check before use

  • Thermal dissipation requirements for 300W power rating.

Key specifications

VDS
100 V
ID
120 A
RDS(on)
2.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

IPB027N10N3+G_Rev2.2.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB027N10N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power transistor designed for high-frequency switching and synchronous rectification.