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IPB039N10N3GATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB039N10N3GATMA1 product

IPB039N10N3GATMA1

MOSFETs - Single

MOSFETN-Channel100VOptiMOS

The IPB039N10N3 G is a high-performance 100V, 160A N-channel power MOSFET in a PG-TO263-7 package, optimized for low on-resistance and high efficiency.

Best for

  • Power supplies
  • Motor control
  • Industrial applications

Avoid if

  • Low-power, space-constrained designs where a smaller package is required.

Check before use

  • Thermal dissipation requirements and gate drive voltage levels.

Key specifications

VDS
100 V
ID
160 A
RDS(on)
3.9 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

599796.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB039N10N3GATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel OptiMOS 3 power transistor designed for high-current, high-efficiency power applications.