IPB054N06N3 G Datasheet, Specs, Alternatives & ECAD | Infineon Technologies | PartGenie

AI summary

IPB054N06N3 G product

The IPB054N06N3 G is a 60V, 80A N-channel power MOSFET from Infineon's OptiMOS 3 series, optimized for high-efficiency DC/DC conversion and high-frequency switching.

Best for

DC/DC converters
Synchronous rectification

Avoid if

Applications requiring voltages above 60V

Check before use

Thermal design
Gate drive voltage

Key specifications

VDS: 60 V
ID: 80 A
RDS(on): 5.4 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power Management

Datasheet

IPP_B057N06N3_Rev2.0.pdf

800 KB

CAD Models

Download ECAD models for IPB054N06N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET designed for high-frequency switching and synchronous rectification.