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IPB065N15N3GATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB065N15N3GATMA1 product

IPB065N15N3GATMA1

MOSFETs - Single

MOSFETN-ChannelOptiMOS 3150V

The IPB065N15N3 G is a high-performance 150V N-channel power MOSFET from Infineon's OptiMOS 3 series, optimized for high-frequency switching and synchronous rectification.

Best for

  • Synchronous rectification
  • High-frequency power conversion

Avoid if

  • Low-power, space-constrained applications where a smaller package is required

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
150 V
ID
130 A
RDS(on)
6.5 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB065N15N3GATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET in a PG-TO263-7 package, rated for 150V and 130A.