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IPB072N15N3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB072N15N3G product

IPB072N15N3G

MOSFETs - Single

MOSFETN-Channel150VOptiMOS

The IPB072N15N3 G is a high-performance 150V N-channel power MOSFET from Infineon's OptiMOS™ 3 series, optimized for high-efficiency power conversion.

Best for

  • Synchronous rectification
  • High-frequency power switching

Avoid if

  • Low-power applications where smaller packages are required

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
150 V
ID
100 A
RDS(on)
7.2 mΩ
Package
TO-263

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

CAD Models

Download ECAD models for IPB072N15N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET designed for high-frequency switching and synchronous rectification, featuring low on-resistance and high current handling.