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IPB107N20N3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB107N20N3G product

IPB107N20N3G

MOSFETs - Single

MOSFETN-Channel200VInfineon

The IPB107N20N3 G is a high-performance 200V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Low-voltage applications where lower RDS(on) parts are available

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
200 V
ID
88 A
RDS(on)
10.7 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

a553d6805d6a438bf2216c2979b7ba7b.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB107N20N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power transistor rated for 200V and 88A, designed for high-efficiency power conversion.