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IPB19DP10NMATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB19DP10NMATMA1 product

IPB19DP10NMATMA1

MOSFETs - Single

P-ChannelMOSFET100V

The IPB19DP10NMATMA1 is a -100V P-channel power MOSFET from Infineon, designed for industrial applications requiring high efficiency and robust thermal performance in a D2PAK (PG-TO263-3) package.

Best for

  • Industrial power switching
  • Motor control

Avoid if

  • Applications requiring N-channel logic

Check before use

  • Thermal design
  • Gate drive compatibility

Key specifications

Vds
-100 V
Id
-13.8 A
Rds(on)
185 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

IndustrialPower

Datasheet

1cd76f4ffa264cba2ad535852a8a3e4d_2404031049_Infineon-Technologies-IPB19DP10NMATMA1_C3279152.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB19DP10NMATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-channel OptiMOS power transistor rated for -100V, suitable for industrial power switching applications.