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IPB200N25N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB200N25N3 G product

IPB200N25N3 G

MOSFETs - Single

Power MOSFETN-Channel250V

The IPB200N25N3 G is a high-performance 250V N-channel power MOSFET optimized for high-frequency switching and synchronous rectification applications.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Low-voltage applications where lower Vds parts are more efficient

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
250 V
Id
64 A
Rds(on)
20 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

IPP_B_I_200N25N3+G+Rev2.2.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB200N25N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon's OptiMOS™3 series, rated for 250V and 64A.