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IPB200N25N3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB200N25N3G product

IPB200N25N3G

MOSFETs - Single

MOSFETN-Channel250VInfineon

The IPB200N25N3G is a high-performance 250V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Low-voltage applications where lower Rds(on) parts are available

Check before use

  • Thermal dissipation requirements

Key specifications

Vds
250 V
Id
64 A
Rds(on)
20 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

201184950a66689d905c7c7d8db99a38.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB200N25N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS™3 N-channel power transistor designed for high-efficiency power conversion applications.