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IPB320N20N3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPB320N20N3G product

IPB320N20N3G

MOSFETs - Single

MOSFETN-Channel200VInfineon

The IPB320N20N3G is a 200V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Applications requiring low-voltage logic level control without gate drivers

Check before use

  • Thermal resistance and PCB cooling area

Key specifications

VDS
200 V
ID
34 A
RDS(on)
32 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

ee6b3f3c858e56c9b55750f47ae5763d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPB320N20N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS™3 N-channel power transistor with a 200V drain-source breakdown voltage and 34A continuous current rating.