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IPD031N06L3GATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD031N06L3GATMA1 product

IPD031N06L3GATMA1

MOSFETs - Single

MOSFETN-Channel60VOptiMOS

The IPD031N06L3 G is a high-performance 60V N-channel power MOSFET from Infineon, optimized for high-frequency DC/DC conversion and synchronous rectification.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring higher than 60V breakdown voltage

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
60 V
Id
100 A
Rds(on)
3.1 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

599831.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD031N06L3GATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power MOSFET designed for high-efficiency power conversion applications.