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IPD034N06N3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD034N06N3G product

IPD034N06N3G

MOSFETs - Single

MOSFETN-Channel60VOptiMOS

The IPD034N06N3G is a high-performance 60V N-channel OptiMOS 3 power MOSFET designed for high-efficiency power conversion.

Best for

  • DC/DC converters
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low gate drive voltages below 2V

Check before use

  • Thermal dissipation requirements at 100A

Key specifications

VDS
60 V
ID
100 A
RDS(on)
3.4 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

CAD Models

Download ECAD models for IPD034N06N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon, optimized for high-frequency switching and DC/DC converter applications.