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IPD042P03L3G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD042P03L3G-HXY product

IPD042P03L3G-HXY

MOSFETs - Single

P-ChannelMOSFET30V120A

The IPD042P03L3G is a high-performance P-Channel MOSFET in a TO-252-2L package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • High-current switching

Avoid if

  • Applications requiring N-Channel logic

Check before use

  • Thermal dissipation requirements

Key specifications

VDSS
-30 V
ID
-120 A
RDS(ON)
4.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

ba83ab17017cb1d8c786e025e62f8c11_2403261507_HXY-MOSFET-IPD042P03L3G-HXY_C22367526.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD042P03L3G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET utilizing advanced trench technology.