IPD048N06L3 G Datasheet, Specs, Alternatives & ECAD | Infineon Technologies | PartGenie

AI summary

IPD048N06L3 G product

The IPD048N06L3 G is a 60V, 90A N-channel OptiMOS 3 power MOSFET in a PG-TO-252-3 package, designed for high-efficiency DC/DC conversion and switching applications.

Best for

DC/DC converters
Synchronous rectification

Avoid if

Applications requiring extremely low gate drive voltage below 4.5V

Check before use

Thermal dissipation requirements

Key specifications

Vds: 60 V
Id: 90 A
Rds(on): 4.8 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power ManagementIndustrial

Datasheet

51dc1fec62afa5191d205313806355c0_Infineon(英飞凌)&IPD048N06L3 G.pdf

800 KB

CAD Models

Download ECAD models for IPD048N06L3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon's OptiMOS 3 family, optimized for high-frequency switching and synchronous rectification.