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IPD068N10N3G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD068N10N3G product

IPD068N10N3G

MOSFETs - Single

MOSFETN-Channel100VOptiMOS

The IPD068N10N3 G is a high-performance 100V N-channel MOSFET optimized for high-frequency power conversion applications.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements at high current

Key specifications

VDS
100 V
ID
90 A
RDS(on)
6.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

f6d617f1949e8cc49fd8c95cb4de4e0c.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD068N10N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET from Infineon's OptiMOS 3 series, rated for 100V and 90A.