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IPD068P03L3G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD068P03L3G-HXY product

IPD068P03L3G-HXY

MOSFETs - Single

MOSFETP-Channel30V80A

The IPD068P03L3G is a -30V, 80A P-Channel MOSFET in a TO-252-2L package, optimized for high-efficiency switching applications.

Best for

  • Battery protection
  • Load switching
  • UPS

Avoid if

  • Applications requiring N-Channel logic
  • Extremely space-constrained designs

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-80 A
RDS(on)
8.8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

42de02d48e78c07c876ae133577d514c_2308221404_HXY-MOSFET-IPD068P03L3G-HXY_C7543017.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD068P03L3G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET designed for battery protection and load switching.