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IPD088N06N3G-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD088N06N3G-HXY product

IPD088N06N3G-HXY

MOSFETs - Single

MOSFETN-Channel60VDPAK

The IPD088N06N3G is a 60V, 80A N-Channel MOSFET in a DPAK package, optimized for low RDS(ON) and efficient switching.

Best for

  • Battery protection
  • Load switching

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements

Key specifications

Vdss
60 V
Id
80 A
RDS(on)
8.3 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

837f304df79305aad25f18ab7e3160fe_2404231036_HXY-MOSFET-IPD088N06N3G-HXY_C22367517.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD088N06N3G-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for high-efficiency switching and battery protection.