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IPD110N12N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD110N12N3 G product

IPD110N12N3 G

MOSFETs - Single

MOSFETN-Channel120VPower Transistor

The IPD110N12N3 G is a high-performance 120V N-channel power MOSFET optimized for high-frequency switching and synchronous rectification.

Best for

  • Synchronous rectification
  • High-frequency switching

Avoid if

  • Low-voltage applications where lower RDS(on) parts are available

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage

Key specifications

VDS
120 V
ID
75 A
RDS(on)
11 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

PowerIndustrial

Datasheet

35896f82814b084e3591c39ceaeab42d.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD110N12N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS™ 3 N-channel power MOSFET from Infineon, rated for 120V and 75A, designed for high-efficiency power conversion.