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IPD122N10N3GATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD122N10N3GATMA1 product

IPD122N10N3GATMA1

MOSFETs - Single

MOSFETN-Channel100VOptiMOS

The IPD122N10N3G is a 100V N-channel power MOSFET from Infineon's OptiMOS 3 series, optimized for high-frequency switching and synchronous rectification.

Best for

  • Synchronous rectification
  • High-frequency switching

Avoid if

  • Low-voltage applications where lower RDS(on) parts are available

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
100 V
ID
59 A
RDS(on)
12.2 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD122N10N3GATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET designed for high-efficiency power conversion applications.