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IPD12CN10NGATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD12CN10NGATMA1 product

IPD12CN10NGATMA1

MOSFETs - Single

MOSFETN-Channel100VInfineon

The IPD12CN10NGATMA1 is a 100V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low-profile packages

Check before use

  • Thermal dissipation capabilities of the PCB footprint

Key specifications

Vdss
100 V
Id
67 A
Rds(on)
12.4 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD12CN10NGATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 2 N-channel power transistor designed for high-efficiency power applications.