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IPD200N15N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD200N15N3 G product

IPD200N15N3 G

MOSFETs - Single

MOSFETN-Channel150VOptiMOS

The IPD200N15N3 G is a 150V, 50A N-channel power MOSFET from Infineon's OptiMOS 3 series, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low voltage or very high current beyond 50A

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
150 V
ID
50 A
RDS(on)
20 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

1912111437_Infineon-Technologies-IPD200N15N3-G_C386332.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD200N15N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET designed for high-efficiency power conversion applications.