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IPD30N06S2L-23-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD30N06S2L-23-HXY product

IPD30N06S2L-23-HXY

MOSFETs - Single

MOSFETN-Channel60VDPAK

The IPD30N06S2L-23 is a 60V, 50A N-Channel MOSFET in a DPAK package, optimized for low-voltage switching and battery protection.

Best for

  • Battery protection circuits
  • Load switches
  • UPS systems

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V
  • High-frequency switching where gate charge is critical

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
60 V
ID
50 A
RDS(ON)
17 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

d56526f0d3016e67016e42def2cebb01_2403261739_HXY-MOSFET-IPD30N06S2L-23-HXY_C22366971.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD30N06S2L-23-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-Channel enhancement mode MOSFET designed for switching applications, featuring a 60V drain-source voltage and 50A continuous current rating.