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IPD33CN10NG AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD33CN10NG product

IPD33CN10NG

MOSFETs - Single

MOSFETN-Channel100VInfineon

The IPD33CN10NG is a 100V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Applications requiring extremely low gate drive voltages below 2V

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
100 V
Id
27 A
Rds(on)
33 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

7fcea93a1f9c68b350254f49704a81fb_2005292038_Infineon-Technologies-IPD33CN10NG_C536760.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD33CN10NG: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS™ 2 N-channel power transistor designed for high-efficiency power applications.