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IPD40DP06NMATMA1-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD40DP06NMATMA1-HXY product

IPD40DP06NMATMA1-HXY

FETs

P-ChannelMOSFET60VTO-252

The IPD40DP06NMATMA1 is a -60V, -10A P-Channel MOSFET in a TO-252-2L package, designed for efficient switching and battery protection.

Best for

  • Battery protection
  • Load switching
  • Brushless motor control

Avoid if

  • Applications requiring higher current or lower RDS(ON) than specified.

Check before use

  • Thermal design and gate drive requirements.

Key specifications

VDS
-60 V
ID
-10 A
RDS(ON)
125 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementMotor Control

Datasheet

f877019ee936492a53694dfaf6401cb8_2401231634_HXY-MOSFET-IPD40DP06NMATMA1-HXY_C20606265.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD40DP06NMATMA1-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using advanced trench technology, optimized for low RDS(ON) and low gate charge.