ProjectsPricingInsights

IPD600N25N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD600N25N3 G product

IPD600N25N3 G

MOSFETs - Single

MOSFETN-Channel250V

The IPD600N25N3 G is a 250V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification in a PG-TO252-3 package.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

    Check before use

      Key specifications

      Vdss
      250 V
      Id
      25 A
      Rds(on)
      60 mΩ

      Compliance & Environment

      RoHS
      Compliant
      REACH
      -
      MSL
      -
      ECCN
      -
      HTSUS
      -

      Application

      Power

      Datasheet

      539055782e6677ea630d3f6b6214ce07_Infineon(英飞凌)&IPD600N25N3 G.pdf

      800 KB

      Datasheet AI

      CAD Models

      Download ECAD models for IPD600N25N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

      EDA Symbol
      Schematic symbol for your EDA tool
      Get Files
      PCB Footprint
      Land pattern for PCB layout
      Get Files
      3D Model
      STEP file for mechanical design
      Get Files
      KiCad Library
      Verified KiCad 8 symbol, footprint, and 3D model
      Generate library

      Login required · CAD models billed separately as an add-on

      Alternative components

      Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

      Design and risk insights

      Questions & answers

      It is an OptiMOS™3 N-channel power transistor designed for high-efficiency power conversion.