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IPD60N10S4L12ATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60N10S4L12ATMA1 product

IPD60N10S4L12ATMA1

MOSFETs - Single

MOSFETN-Channel100VAutomotive

The IPD60N10S4L-12 is a high-performance 100V N-channel MOSFET designed for automotive and industrial power applications.

Best for

  • Automotive power systems
  • DC-DC converters

Avoid if

  • Applications requiring extremely low gate drive voltages below 4.5V

Check before use

  • Thermal dissipation requirements on the PCB

Key specifications

VDS
100 V
ID
60 A
RDS(on)
12 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

AutomotivePower Management

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60N10S4L12ATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an AEC-Q101 qualified N-channel power MOSFET from Infineon, optimized for automotive applications with a 100V drain-source voltage and 60A current rating.