IPD60R180P7 Datasheet, Specs, Alternatives & ECAD | Infineon | PartGenie

AI summary

IPD60R180P7 product

The IPD60R180P7 is a 650V N-channel superjunction MOSFET from Infineon's CoolMOS P7 series, optimized for high efficiency in power conversion applications.

Best for

PFC stages
LLC resonant converters
High-density power supplies

Avoid if

Low-voltage applications where lower RDS(on) or different package types are required

Check before use

Thermal resistance and PCB layout for heat dissipation

Key specifications

VDS: 650 V
RDS(on): 180 mOhm
ID: 18 A

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: 1
ECCN: -
HTSUS: -

Application

Power SuppliesIndustrial

Datasheet

d1358c64c4309af28b60d91ea1fa5b35_2304140030_Infineon-Technologies-IPD60R180P7_C467010.pdf

800 KB

CAD Models

Download ECAD models for IPD60R180P7: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V, 18A N-channel power MOSFET utilizing Infineon's 7th generation CoolMOS superjunction technology, packaged in a DPAK (PG-TO252-3).