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IPD60R180P7S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60R180P7S product

IPD60R180P7S

MOSFETs - Single

MOSFETSuperjunction600VInfineon

The IPD60R180P7S is a high-efficiency 600V N-Channel superjunction MOSFET from Infineon's CoolMOS P7 series, ideal for power conversion applications.

Best for

  • PFC stages
  • LLC resonant converters
  • Power adapters

Avoid if

  • Applications requiring extremely low gate charge beyond this device's capability

Check before use

  • Thermal design on PCB
  • Gate drive signal integrity

Key specifications

VDS
650 V
RDS(on)
180 mOhm
ID (pulse)
53 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

f5dfd6b21b062292c21146ea3d4b4b16.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60R180P7S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V N-Channel power MOSFET using superjunction technology, designed for high efficiency in power supply applications.