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IPD60R1K4C6ATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60R1K4C6ATMA1 product

IPD60R1K4C6ATMA1

MOSFETs - Single

MOSFETCoolMOS600VInfineon

The IPD60R1K4C6ATMA1 is a 600V N-Channel CoolMOS C6 power MOSFET from Infineon, designed for high-efficiency power conversion applications.

Best for

  • PFC stages
  • Adapters
  • Server power supplies

Avoid if

  • Applications requiring high continuous current beyond 3.2A

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
600 V
Id
3.2 A
Rds(on)
1.4 Ohm

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60R1K4C6ATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V N-Channel power MOSFET utilizing Infineon's superjunction CoolMOS C6 technology, optimized for high-efficiency switching.