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IPD60R280P7S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60R280P7S product

IPD60R280P7S

MOSFETs - Single

MOSFETCoolMOSInfineonPower Transistor

The IPD60R280P7S is a high-efficiency 600V CoolMOS P7 power MOSFET in a DPAK package, ideal for power supply applications requiring low switching losses and high robustness.

Best for

  • PFC stages
  • LLC resonant converters
  • Power adapters

Avoid if

  • Applications requiring extremely low voltage or very high current beyond 12A continuous

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
650 V
RDS(on)
280 mOhm
ID
12 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Power SuppliesIndustrial

Datasheet

7356a0c517e744cc5c7b2e4422f1e985.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60R280P7S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V N-channel superjunction power MOSFET from Infineon's 7th generation CoolMOS P7 platform, designed for high-efficiency power conversion.