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IPD60R360P7S AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60R360P7S product

IPD60R360P7S

MOSFETs - Single

MOSFETCoolMOSPower Transistor650V

The IPD60R360P7S is a high-efficiency 650V CoolMOS P7 power MOSFET in a DPAK package, optimized for PFC and LLC power stages.

Best for

  • PFC stages
  • LLC resonant converters
  • Power adapters

Avoid if

  • Applications requiring extremely high current beyond the 6A rating

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS(max)
650 V
RDS(on)
360 mΩ
ID (100°C)
6 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Power SuppliesLighting

Datasheet

08e1f869044443e002f326eda999f757_2005292107_Infineon-Technologies-IPD60R360P7S_C536820.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60R360P7S: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

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Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V/650V (VDS max) superjunction MOSFET from Infineon's 7th generation CoolMOS P7 platform, designed for high efficiency in power conversion.