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IPD60R600C6 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60R600C6 product

IPD60R600C6

MOSFETs - Single

MOSFETCoolMOS650VPower Transistor

The IPD60R600C6 is a 650V N-Channel CoolMOS C6 MOSFET optimized for high-efficiency power conversion applications.

Best for

  • High-efficiency power supplies
  • PFC stages
  • Resonant converters

Avoid if

  • Applications requiring extremely low gate charge beyond standard CoolMOS capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

Vds
650 V
Id
7.3 A
Rds(on)
0.6 Ohm

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
MSL 1
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

745e7ab12214816f9888796169c4a79f_2005292108_Infineon-Technologies-IPD60R600C6_C536829.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60R600C6: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 650V N-Channel Power MOSFET from Infineon, utilizing Superjunction (SJ) technology to provide low switching and conduction losses.