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IPD60R600P7S E8228 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD60R600P7S E8228 product

IPD60R600P7S E8228

MOSFETs - Single

MOSFETCoolMOS600VSuperjunction

The IPD60R600P7S is a 600V N-Channel Superjunction MOSFET in a DPAK package, optimized for high-efficiency power conversion in PFC and LLC stages.

Best for

  • PFC stages
  • LLC resonant converters
  • Compact power supplies

Avoid if

  • Applications requiring extremely high continuous current beyond 6A

Check before use

  • Thermal dissipation capacity of the PCB
  • Gate drive signal integrity

Key specifications

VDS(max)
650 V
RDS(on)
600 mOhm
ID(cont)
6 A

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
3
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

d651495c28141e4a259328eb5f2c78db_Infineon(英飞凌)&IPD60R600P7S E8228.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD60R600P7S E8228: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a 600V CoolMOS P7 series power MOSFET from Infineon, utilizing superjunction technology for high efficiency and low switching losses.