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IPD80P03P4L-07-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD80P03P4L-07-HXY product

IPD80P03P4L-07-HXY

MOSFETs - Single

P-ChannelMOSFET30V70A

The IPD80P03P4L-07 is a high-performance P-Channel MOSFET designed for power switching applications.

Best for

  • Battery management systems
  • Power switching

Avoid if

  • Applications requiring N-Channel logic
  • High-frequency switching beyond device capabilities

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
-30 V
ID
-70 A
RDS(on)
8 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power ManagementIndustrial

Datasheet

9d52120568ecb5264fd458ae9bc42c31_2403261738_HXY-MOSFET-IPD80P03P4L-07-HXY_C22366833.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD80P03P4L-07-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel enhancement mode MOSFET using trench technology, rated for -30V and -70A.