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IPD80R2K0P7ATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD80R2K0P7ATMA1 product

IPD80R2K0P7ATMA1

MOSFETs - Single

800VCoolMOSMOSFETInfineon

The IPD80R2K0P7 is an 800V N-Channel superjunction MOSFET optimized for high-efficiency, low-power flyback applications.

Best for

  • Chargers
  • Adapters
  • LED Lighting

Avoid if

  • High-current applications exceeding 3A

Check before use

  • Gate drive voltage levels
  • Thermal dissipation on PCB

Key specifications

VDS
800 V
RDS(on)
2.0 Ohm
ID
3 A

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

Power ConversionIndustrial

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD80R2K0P7ATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an 800V CoolMOS P7 series power MOSFET designed for high-efficiency power conversion in compact designs.