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IPD90P03P4L-04-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPD90P03P4L-04-HXY product

IPD90P03P4L-04-HXY

MOSFETs - Single

MOSFETP-Channel30V120A

The IPD90P03P4L-04 is a P-Channel enhancement mode MOSFET designed for high-current switching and battery protection applications.

Best for

  • Battery protection
  • High-current switching

Avoid if

  • Applications requiring N-Channel logic

Check before use

  • Thermal dissipation requirements

Key specifications

VDSS
-30 V
ID
-120 A
RDS(ON)
4.5 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Management

Datasheet

e18f9091151828e9836258a9717447cc_2401231634_HXY-MOSFET-IPD90P03P4L-04-HXY_C20606270.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPD90P03P4L-04-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a P-Channel MOSFET utilizing advanced trench technology, optimized for low RDS(ON) and efficient switching.