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IPG16N10S4-61 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPG16N10S4-61 product

IPG16N10S4-61

MOSFETs - Arrays

AutomotiveMOSFETDual-Channel

The IPG16N10S4-61 is a dual N-channel OptiMOS™-T2 power MOSFET designed for automotive applications, featuring a 100V drain-source voltage and 16A continuous current capacity.

Best for

  • Automotive power switching
  • Dual-channel motor control

Avoid if

  • Applications requiring extremely low RDS(on) below 50mΩ

Check before use

  • Thermal dissipation limits on PCB

Key specifications

VDS
100 V
ID
16 A
RDS(on)
61 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

AutomotivePower Management

Datasheet

e5e5d232eecda47731a57ae4eef0bd9e_Infineon(英飞凌)&IPG16N10S4-61.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPG16N10S4-61: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode power MOSFET from Infineon, optimized for automotive use with AEC Q101 qualification.