ProjectsPricingInsights

IPG20N04S4L-11 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPG20N04S4L-11 product

IPG20N04S4L-11

MOSFETs - Arrays

AutomotiveMOSFETDual Channel

The IPG20N04S4L-11 is a dual N-channel OptiMOS™-T2 power MOSFET optimized for automotive applications, offering 40V breakdown voltage and 20A current capacity in a compact PG-TDSON-8-4 package.

Best for

  • Automotive power electronics
  • Dual-channel switching applications

Avoid if

  • Applications requiring higher than 40V breakdown voltage

Check before use

  • Thermal design and PCB layout for heat dissipation

Key specifications

VDS
40 V
ID
20 A
RDS(on)
11.6 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

AutomotivePower Management

Datasheet

pYYBAGNXnlmAF3z8AAJzn2YIpLI338.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPG20N04S4L-11: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
Get Files
PCB Footprint
Land pattern for PCB layout
Get Files
3D Model
STEP file for mechanical design
Get Files
KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
Generate library

Login required · CAD models billed separately as an add-on

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an AEC-Q101 qualified dual N-channel enhancement mode power MOSFET from Infineon, designed for automotive and industrial power switching.