IPG20N06S2L-50A-HXY Datasheet, Specs, Alternatives & ECAD | HXY MOSFET | PartGenie

AI summary

IPG20N06S2L-50A-HXY product

The IPG20N06S2L-50A is a dual N-channel SGT MOSFET designed for efficient power switching in consumer and industrial applications.

Best for

Synchronous rectification
Motor control
Power supply switching

Avoid if

Applications requiring extremely low gate drive voltages below 4.5V

Check before use

Thermal design
Gate drive signal integrity

Key specifications

Vdss: 60 V
Id: 35 A
RDS(on): 14 mΩ

Compliance & Environment

RoHS: -
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Motor ControlPower Supplies

Datasheet

50b9d8d6340ff01e5a75702875ef47a7_2407151447_HXY-MOSFET-IPG20N06S2L-50A-HXY_C22366989.pdf

800 KB

CAD Models

Download ECAD models for IPG20N06S2L-50A-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel SGT (Shielded Gate Trench) enhancement mode MOSFET, rated for 60V and 35A, packaged in a DFN5X6B-8L.