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IPG20N06S2L65AATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPG20N06S2L65AATMA1 product

IPG20N06S2L65AATMA1

MOSFETs - Arrays

AutomotiveMOSFETDual-Channel

The IPG20N06S2L65AATMA1 is a dual N-channel OptiMOS MOSFET designed for automotive and power management applications, featuring a 55V breakdown voltage and 20A current rating.

Best for

  • Automotive power switching
  • Dual-channel power management

Avoid if

  • Applications requiring higher voltage or current ratings

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
55 V
ID
20 A
RDS(on)
65 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

AutomotivePower Management

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPG20N06S2L65AATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel logic-level enhancement mode power MOSFET from Infineon, qualified for automotive use (AEC-Q101).