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IPG20N06S4L-26-HXY AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPG20N06S4L-26-HXY product

IPG20N06S4L-26-HXY

MOSFETs - Arrays

MOSFETDual N-ChannelSGT60V

The IPG20N06S4L-26 is a dual N-channel SGT MOSFET optimized for high-efficiency power switching at 60V.

Best for

  • Synchronous rectification
  • Isolated DC-DC converters
  • Motor control

Avoid if

  • Applications requiring voltage ratings significantly above 60V

Check before use

  • Thermal design and PCB layout for heat dissipation

Key specifications

Vdss
60 V
Id
35 A
Rds(on)
14 mΩ

Compliance & Environment

RoHS
-
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power SupplyMotor Control

Datasheet

c9993020cf6f6c248888373d7bdde20d_2407151530_HXY-MOSFET-IPG20N06S4L-26-HXY_C20606274.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPG20N06S4L-26-HXY: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel SGT (Shielded Gate Trench) MOSFET in a DFN5X6B-8L package, rated for 60V and 35A.