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IPG20N10S4L-22A AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPG20N10S4L-22A product

IPG20N10S4L-22A

MOSFETs - Arrays

Dual MOSFETAutomotive100V

The IPG20N10S4L-22A is a dual N-channel OptiMOS-T2 MOSFET designed for automotive and high-reliability power applications.

Best for

  • Automotive power systems
  • Dual-channel switching

Avoid if

  • Applications requiring extremely low RDS(on) below 22mΩ

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
100 V
ID
20 A
RDS(on)
22 mΩ

Compliance & Environment

RoHS
RoHS Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

AutomotivePower Management

Datasheet

b37086c087280cad2452265485187e30.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPG20N10S4L-22A: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement mode power MOSFET featuring logic level gate drive, rated for 100V and 20A.