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IPG20N10S4L35ATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPG20N10S4L35ATMA1 product

IPG20N10S4L35ATMA1

MOSFETs - Arrays

AutomotiveMOSFETDual-Channel

The IPG20N10S4L35ATMA1 is a dual N-channel OptiMOS™-T2 power MOSFET optimized for automotive applications, offering 100V breakdown voltage and 20A current capacity in a compact PG-TDSON-8-4 package.

Best for

  • Automotive power systems
  • Dual-channel switching applications

Avoid if

  • Applications requiring higher than 20A continuous current per channel

Check before use

  • Thermal dissipation requirements on the PCB

Key specifications

Vds
100 V
Id
20 A
Rds(on)
35 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

AutomotivePower Management

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPG20N10S4L35ATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is a dual N-channel enhancement-mode power MOSFET designed for automotive use, featuring high efficiency and 175°C thermal capability.