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IPN80R900P7ATMA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPN80R900P7ATMA1 product

IPN80R900P7ATMA1

MOSFETs - Single

MOSFETCoolMOS800VInfineon

The IPN80R900P7 is an 800V N-Channel CoolMOS P7 power transistor in a SOT-223 package, designed for high-efficiency flyback applications.

Best for

  • Flyback converters
  • LED drivers
  • Auxiliary power supplies

Avoid if

  • High-current applications exceeding 6A
  • Designs requiring extreme thermal performance beyond SOT-223 capabilities

Check before use

  • Gate drive voltage levels
  • Thermal resistance on PCB

Key specifications

VDS
800 V
RDS(on)
0.90 Ohm
ID
6 A
Qg
15 nC

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
MSL 1
ECCN
-
HTSUS
-

Application

Power SupplyIndustrial

Datasheet

Infineon-company-51.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPN80R900P7ATMA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an 800V superjunction MOSFET from Infineon's CoolMOS P7 series, optimized for ease-of-use and high power density.