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IPP023N10N5 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPP023N10N5 product

IPP023N10N5

MOSFETs - Single

MOSFETPower Transistor100V

The IPP023N10N5 is a high-performance 100V N-channel power MOSFET from Infineon, optimized for high-efficiency power conversion.

Best for

  • Synchronous rectification
  • High-frequency power supplies

Avoid if

  • Low-power, space-constrained applications

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
100 V
ID
120 A
RDS(on)
2.3 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
1
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

d84f93b2a25af486b6d49fd041ff3bf9.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPP023N10N5: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
Verified KiCad 8 symbol, footprint, and 3D model
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Where to Buy

Real-time and catalog pricing from verified distributors

Live prices updated on demand · Catalog (~) prices may differ

Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 5 N-channel power MOSFET rated for 100V and 120A, designed for high-frequency switching.