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IPP048N12N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPP048N12N3 G product

IPP048N12N3 G

MOSFETs - Single

MOSFETN-ChannelOptiMOS 3

The IPP048N12N3 G is a high-performance 120 V N-channel power MOSFET from Infineon's OptiMOS 3 series, optimized for high-frequency switching and synchronous rectification.

Best for

  • High-frequency switching
  • Synchronous rectification

Avoid if

  • Applications requiring extremely small form factors

Check before use

  • Thermal dissipation requirements

Key specifications

VDS
120 V
ID
100 A
RDS(on)
4.8 mΩ

Compliance & Environment

RoHS
RoHS compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power

Datasheet

IPP048N12N3+G_Rev2.1.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPP048N12N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET designed for high-efficiency power conversion applications.