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IPP086N10N3 G AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPP086N10N3 G product

IPP086N10N3 G

MOSFETs - Single

MOSFETN-Channel100VPower Transistor

The IPP086N10N3 G is a high-performance 100V N-channel power MOSFET from Infineon's OptiMOS™ 3 series, optimized for high-frequency switching and synchronous rectification.

Best for

  • DC-DC converters
  • Synchronous rectification
  • High-frequency switching

Avoid if

  • Low-voltage applications where lower RDS(on) parts are available
  • Space-constrained designs requiring smaller packages than TO-220

Check before use

  • Thermal dissipation requirements
  • Gate drive voltage levels

Key specifications

VDS
100 V
ID
80 A
RDS(on)
8.2 mΩ

Compliance & Environment

RoHS
Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

IPP086N10N3+G_Rev2.2.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPP086N10N3 G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an N-channel power MOSFET designed for high-efficiency power conversion, featuring a 100V breakdown voltage and 80A current capacity.