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IPP110N20N3GXKSA1 AI Analysis:
Datasheet, Specs, Alternatives & ECAD

AI summary

IPP110N20N3GXKSA1 product

IPP110N20N3GXKSA1

MOSFETs - Single

MOSFETN-Channel200VOptiMOS

The IPP110N20N3 G is a high-performance 200V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

  • Synchronous rectification
  • High-frequency DC-DC converters

Avoid if

  • Applications requiring surface-mount (use IPB107N20N3 G instead)

Check before use

  • Thermal design and gate drive circuitry

Key specifications

Vds
200 V
Id
88 A
Rds(on)
11 mΩ

Compliance & Environment

RoHS
ROHS3 Compliant
REACH
-
MSL
-
ECCN
-
HTSUS
-

Application

Power Conversion

Datasheet

IPP_I_110N20N3+G_IPB107N20N3+G+Rev2.2_pdf.pdf

800 KB

Datasheet AI

CAD Models

Download ECAD models for IPP110N20N3GXKSA1: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol
Schematic symbol for your EDA tool
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PCB Footprint
Land pattern for PCB layout
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3D Model
STEP file for mechanical design
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KiCad Library
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Where to Buy

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power transistor designed for high-efficiency power conversion applications.