IPP200N15N3G Datasheet, Specs, Alternatives & ECAD | Infineon | PartGenie

AI summary

IPP200N15N3G product

The IPP200N15N3G is a high-performance 150V N-channel power MOSFET from Infineon, optimized for high-frequency switching and synchronous rectification.

Best for

Synchronous rectification
High-frequency power switching

Avoid if

Applications requiring extremely low gate drive voltages below 5V

Check before use

Thermal dissipation requirements at high current

Key specifications

VDS: 150 V
ID: 50 A
RDS(on): 20 mΩ

Compliance & Environment

RoHS: Compliant
REACH: -
MSL: -
ECCN: -
HTSUS: -

Application

Power Conversion

Datasheet

pYYBAGHDMoGAfr38AA-GU1zxHc8828.pdf

800 KB

CAD Models

Download ECAD models for IPP200N15N3G: KiCad symbol & footprint, Altium footprint, PCB footprint, and 3D model.

EDA Symbol

Schematic symbol for your EDA tool

PCB Footprint

Land pattern for PCB layout

3D Model

STEP file for mechanical design

KiCad Library

Verified KiCad 8 symbol, footprint, and 3D model

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Alternative components

Alternatives are being enriched. Analyze this part in PartGenie for the latest matches.

Design and risk insights

Questions & answers

It is an OptiMOS 3 N-channel power MOSFET designed for high-efficiency power conversion applications.